Unified Model of Intrinsic Spin-Hall Effect in Spintronic, Optical, and Graphene Systems

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概要

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• A semiclassical model of the intrinsic spin-Hall effect (SHE) is presented which is relevant for a wide class of systems, including the two-dimensional electron gas with Rashba SOC. We start with a fully quantum mechanical treatment, introducing a gauge field formulation of the effect. Using this formulation as a basis, we construct an intuitive picture of the SHE, and derive general expressions for the spin-Hall current and conductivity. Finally, we propose an analogous effect in bilayer graphene systems.

• 2009-10-15

著者

• TAN Seng

  Data Storage Institute

• Jalil Mansoor

  Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576

• Fujita Takashi

  Information Storage Materials Laboratory, Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576

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