Self-Aligned Top-Gate Oxide Thin-Film Transistor Formed by Aluminum Reaction Method

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概要

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• We developed a novel highly reliable self-aligned top-gate oxide semiconductor thin-film transistor (TFT) formed by the aluminum (Al) reaction method. In this method, Al diffusion into the oxide semiconductor was observed. The low sheet resistivity of the source/drain regions was attributed to Al working as a donor in the oxide semiconductor. The TFTs with 4 μm channel length exhibited a field-effect mobility of 9.8 cm2 V-1 s-1, a threshold voltage of $-1.5$ V, and a subthreshold swing of 0.22 V/decade. Highly reliable TFTs were obtained after 300 °C annealing without increasing the sheet resistivity of source/drain regions.

• 2011-09-25

著者

• Ohshima Yoshihiro

  Core Device Development Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

• Arai Toshiaki

  Core Device Development Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

• Morosawa Narihiro

  Core Device Development Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

• Morooka Mitsuo

  Core Device Development Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

• Sasaoka Tatsuya

  Core Device Development Group, Sony Corporation, Atsugi, Kanagawa 243-0014, Japan

関連論文

• Self-Aligned Top-Gate Oxide Thin-Film Transistor Formed by Aluminum Reaction Method

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