Structural Dependence of Grain Boundary Resistivity in Copper Nanowires
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概要
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We report the direct measurement of individual grain boundary (GB) resistances and the critical role of GB structure in the increased resistivity in copper nanowires. By measuring both intra- and inter-grain resistance with a four-probe scanning tunneling microscope, large resistance jumps are revealed owing to successive scattering across high-angle random GBs, while the resistance changes at twin and other coincidence boundaries are negligibly small. The impurity distributions in the nanowires are characterized in correlating to the microstructures. The resistance of high symmetry coincidence GBs and the impurity contributions are then calculated using a first-principle method which confirms that the coincidence GBs have orders of magnitude smaller resistance than the high-angle random GBs.
- 2011-08-25
著者
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Evans Boyd
Measurement Science and Systems Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Meyer Harry
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Nicholson Don
Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Kenik Edward
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Radhakrishnan Balasubramaniam
Computer Science and Mathematics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Kim Tae-Hwan
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Zhang X.-G.
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Kulkarni Nagraj
Measurement Science and Systems Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.
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Li An-Ping
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, U.S.A.