Effects of N<sub>2</sub>--O<sub>2</sub> Gas Mixture Ratio on Microorganism Inactivation in Low-Pressure Surface Wave Plasma
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In this study, the effect of N<sub>2</sub>/O<sub>2</sub> gas mixture ratio on low-pressure surface wave plasma inactivation of spore-forming bacteria was investigated. It was experimentally confirmed from the quadrupole mass spectrometry measurements that the spores were etched by atomic oxygen via converting the hydrogen atoms constituting microorganisms into H<sub>2</sub>O and the carbon into CO<sub>2</sub>. On the basis of results of plasma diagnostics by optical emission spectroscopy and the results of inactivation efficiency by colony-forming units and scanning electron microscope, we found that although there is the highest ultraviolet (UV) emission intensity in pure N<sub>2</sub> plasma and the highest etching efficiency in 90% O<sub>2</sub>/10% N<sub>2</sub> plasma, the inactivation rate of microorganisms was not so efficient. The best inactivation result was obtained in 30--80% O<sub>2</sub> gas mixture ratios after 60 s plasma irradiation. The present results indicated that more efficient inactivation is achieved by the synergetic effects between atomic oxygen etching and the vacuum ultraviolet (VUV)/UV emission by combining both effects via optimizing N<sub>2</sub>/O<sub>2</sub> gas mixture ratio.
- 2011-08-25
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