Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer

概要

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Using rigorous two-dimensional (2D) finite-element simulations, we show that increasing the doping density at electron blocking layer (EBL) not only reduces the electron overflow out of the active region, but also improves the hole injection and therefore effectively enhances the light power of InGaN/GaN light-emitting diodes (LEDs). A new p-side down structure with low turn-on voltage and high light power is also proposed. By using a graded EBL layer, we show that polarization-induced hole ionization results in higher p-type doping in the EBL and higher light power. The graded EBL also improves band structure which leads to considerably low turn-on voltage.
2011-08-25