Coalescence of Epitaxial Lateral Overgrowth-Diamond on Stripe-Patterned Nucleation on Ir/MgO(001)
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概要
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The coalescence of epitaxial lateral overgrowth (ELO)-diamonds from stripe-patterned diamond nucleation formed on (001) Ir/MgO has been investigated. Scanning electron microscopy showed only continuous macro steps on the coalesced ELO-diamond layers. Cross-sectional Raman mappings for the 1332 cm-1 diamond peak revealed that ELO regions including coalescence boundaries had a lower full width at half maximum value than regions vertically grown on a nucleation layer. Continuously observed strong tensile strains in ELO regions indicated that additional defect formation to relax the lattice was suppressed even after the coalescence. These results showed that the ELO diamond process could be used to obtain high crystalline diamond films by heteroepitaxy.
- 2011-09-25
著者
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Sawabe Atsuhito
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Mita Seiji
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Sawabe Atsuhito
Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, Sagamihara 229-8558, Japan
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Washiyama Shun
Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, Sagamihara 229-8558, Japan
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Suzuki Kazuhiro
TOPLAS ENGINEERING Co., Ltd., Chofu, Tokyo 182-0006, Japan
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Mita Seiji
Department of Electrical Engineering and Electronics, College of Science and Engineering, Aoyama Gakuin University, Sagamihara 229-8558, Japan
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