Transport Anisotropy of Epitaxial VO₂ Films near the Metal--Semiconductor Transition

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概要

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• We report a very large anisotropy in the dc conductivity of epitaxial VO₂ thin films deposited on a single-crystal (100) TiO₂ substrate. There was a large tensile strain along the $c$-axis and a compressive strain along the $a$-axis of rutile VO₂ due to the lattice mismatch between VO₂ and TiO₂. The in-plane conductivity was measured along $\langle 010\rangle$ and $\langle 001\rangle$ of VO₂, and it is found that the conductivity anisotropy ratio $\sigma_{\langle 001\rangle}/\sigma_{\langle 010\rangle}$ was 41.5 at 300 K, much larger than that of single-crystal VO₂.

• 2011-09-25

著者

• Wolf Stuart

  Department of Physics, University of Virginia, Charlottesville, VA 22904, U.S.A.

• Kittiwatanakul Salinporn

  Department of Physics, University of Virginia, Charlottesville, VA 22904, U.S.A.

• Lu Jiwei

  Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, U.S.A.

関連論文

• Transport Anisotropy of Epitaxial VO2 Films near the Metal--Semiconductor Transition

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