Estimating the Junction Temperature of InGaN and AlGaInP Light-Emitting Diodes

スポンサーリンク

概要

• 論文の詳細を見る

• The junction temperature of light-emitting diodes (LEDs) directly and significantly affects LEDs performances. Thus, accurate measurement and precise estimation of LEDs junction temperature become extremely important. In this study, we analyze the physical foundation of temperature-dependent electrical characteristics and develop a new scheme to directly express the dependence of junction temperature on injected current for InGaN and AlGaInP LEDs. From a more general viewpoint, our scheme for the estimation of junction temperature is primarily based on the LEDs external properties, and therefore can be applied to other kinds of III--V compound-based semiconductor LEDs.

• 2011-04-25

著者

• Lee Ya-Ju

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

• Chen Chih-Hao

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

• Lee Chia-Jung

  Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan

関連論文

• Estimating the Junction Temperature of InGaN and AlGaInP Light-Emitting Diodes

スポンサーリンク