Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate

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概要

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• In this study, the high removal rate silicon carbide (SiC) chemical mechanical polishing (CMP) slurry was researched to reduce polishing process time. At first, oxidizing reaction was researched to understand the effectiveness of oxidizer in SiC polishing mechanism and then oxidizer was optimized to increase reactivity for high SiC removal at the point of kinds and amount. Next research was to find out additives to reduce polishing time by making brittle layer at SiC surface. This brittle layer can faster be removed at polishing process than without additives. As a result, through this research, we could achieve high 4H-SiC removal CMP Slurry using optimization of oxidizer and additives.

• 2011-04-25

著者

• Nitta Hiroshi

  Infratech Section, Research and Development Department, Technology Division, Nitta Haas Inc., Kyotanabe, Kyoto 610-0333, Japan

• Hirao Takashi

  Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Isobe Akira

  Infratech Section, Research and Development Department, Technology Division, Nitta Haas Inc., Kyotanabe, Kyoto 610-0333, Japan

• Park Jae

  Infratech Section, Research and Development Department, Technology Division, Nitta Haas Inc., Kyotanabe, Kyoto 610-0333, Japan

関連論文

• Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate

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