Relaxation Phenomena of a Magnetic Nanoparticle Assembly with Randomly Oriented Anisotropy
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概要
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The effects of a randomly oriented anisotropy on relaxation phenomena including the memory effect of a noninteracting magnetic nanoparticle assembly, are numerically studied with a localized partition function and a master equation, leading to the following results. During the zero-field-cooled (ZFC) process, the energy barrier histogram changes with temperature, while during the field-cooled (FC) process it remains stable. In the relaxation process after ZFC initialization, the effective energy barrier distribution, which is derived from the $T\ln(t/\tau_{0})$ ($T$ temperature, $t$ time, and $\tau_{0}$ characteristic time constant) scaling curve, only reflects the low-energy region of the energy barrier histogram. The memory effect with temporary cooling during time evolution occurs in the studied assembly even without volume distribution and particle interaction involved.
- 2011-03-25
著者
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Kong XueDong
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, P. R. China
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Wen iao
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, P. R. China
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Zhen Hui
State Key Laboratory of Optoelectronic Materials and Technologies, and Institute of Condensed Matter Physics, Sun Yat-sen University, Guangzhou 510275, P. R. China
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Di Hu
State Key Laboratory of Optoelectronic Materials and Technologies, and Institute of Condensed Matter Physics, Sun Yat-sen University, Guangzhou 510275, P. R. China
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En YunFei
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, P. R. China
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Fang WenXiao
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, P. R. China