Low-Voltage Organic Field-Effect Transistors Fabricated on Self-Assembled-Monolayer-Free SrTiO3 Insulator

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概要

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• Strontium titanate (SrTiO3) thin film with a dielectric constant of $\varepsilon_{\text{r}} = 12.1$ prepared on a heavily doped n-type silicon wafer by sputtering. Both pentacene and C60 field-effect transistors fabricated using the self-assembled monolayer (SAM)-free SrTiO3 as an insulator showed well-saturated output characteristics at a driving voltage as low as $-3$ or 3 V. Hole mobility of the pentacene-FET was 0.28 cm2 V-1 s-1, while electron mobility of the C60-FET was 0.09 cm2 V-1 s-1.

• 2011-01-25

著者

• Yan Hu

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi

• Okuzaki Hidenori

  Interdisciplinary Graduate School Of Medicine And Engineering University Of Yamanashi

• Yan Hu

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan

• Hanagata Hiroki

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan

• Jo Toshihiko

  Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan

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• Low-Voltage Organic Field-Effect Transistors Fabricated on Self-Assembled-Monolayer-Free SrTiO3 Insulator

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