Lateral Manipulation of Single Defect on Insulating Surface Using Noncontact Atomic Force Microscope
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概要
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A single atomic defect on an ionic crystal surface was manipulated at the atomic level using an atomic force microscope. During raster scanning, the defect was manipulated at near the tip--sample distance and at room temperature. The defect, which is imaged as a sharp half-moon shape, moves continuously if the tip is close to the sample surface. The defect randomly moves along a zigzag or straight path or jumps long distances. The movement of the defect on an insulator is complex in contrast to that on semiconductors. The defect moves suddenly owing to the tip approaching the surface when the distance feedback is overshot under the condition of a large difference in frequency shift between the feedback set point and a weak interaction on the defect.
- 2011-01-25
著者
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Abe Masayuki
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Abe Masayuki
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Morita Seizo
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Morita Seizo
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Sugimoto Yoshiaki
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yi Insook
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Nishi Ryuji
Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
関連論文
- Lateral Manipulation of Single Defect on Insulating Surface Using Noncontact Atomic Force Microscope
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