Monolithic Thermoelectric Devices Prepared with Multilayer Cofired Ceramics Technology

概要

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Novel monolithic thermoelectric (TE) devices were fabricated using multilayer co-fired ceramics technology and p-type, n-type, and insulator layers of oxide materials. (La1.97,Sr0.03)CuO4 and (Nd1.97,Ce0.03)CuO4 served as p- and n-type thermoelectric materials, respectively. A mixture of Mg2SiO4 and silicate glass was utilized as an insulator sandwiched between p- and n-type layers. The materials constituting a TE device must have mutually matching thermal shrinkage characteristics. The dimensions of a TE device comprising 25 pairs of p–i–n junctions were $9.6 \times 6.9 \times 5.0$ mm3. The observed maximum open-circuit voltage and electric output power of the TE devices were 2.3 V and 40 mW/cm2 at $\Delta T = 360$ K (between 653 and 293 K), respectively.
2010-09-25