Tungsten Contact and Line Resistance Reduction with Advanced Pulsed Nucleation Layer and Low Resistivity Tungsten Treatment

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概要

• 論文の詳細を見る

• This paper describes electrical testing results of new tungsten chemical vapor deposition (CVD-W) process concepts that were developed to address the W contact and bitline scaling issues on 55 nm node devices. Contact resistance ($R_{\text{c}}$) measurements in complementary metal oxide semiconductor (CMOS) devices indicate that the new CVD-W process for sub-32 nm and beyond — consisting of an advanced pulsed nucleation layer (PNL) combined with low resistivity tungsten (LRW) initiation — produces a 20–30% drop in $R_{\text{c}}$ for diffused NiSi contacts. From cross-sectional bright field and dark field transmission electron microscopy (TEM) analysis, such $R_{\text{c}}$ improvement can be attributed to improved plugfill and larger in-feature W grain size with the advanced PNL+LRW process. More experiments that measured contact resistance for different feature sizes point to favorable Rc scaling with the advanced PNL+LRW process. Finally, 40% improvement in line resistance was observed with this process as tested on 55 nm embedded dynamic random access memory (DRAM) devices, confirming that the advanced PNL+LRW process can be an effective metallization solution for sub-32 nm devices.

• 2010-09-25

著者

• Danek Michal

  Direct Metals Business Unit, Novellus Systems, Inc., 4000 North First Street, San Jose, CA 95134, U.S.A.

• Nakayama Tomoo

  NEC Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 229-1198, Japan

• Kariya Atsushi

  NEC Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 229-1198, Japan

• Hizume Shunichi

  Novellus Systems Japan, Livmo Building 11F, 3-9-1 Shin-yokohama, Kohoku-ku, Yokohama 222-0033, Japan

• Chandrashekar Anand

  Direct Metals Business Unit, Novellus Systems, Inc., 4000 North First Street, San Jose, CA 95134, U.S.A.

• Itou Takamasa

  NEC Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 229-1198, Japan

• Chen Feng

  Direct Metals Business Unit, Novellus Systems, Inc., 4000 North First Street, San Jose, CA 95134, U.S.A.

• Lin Jasmine

  Direct Metals Business Unit, Novellus Systems, Inc., 4000 North First Street, San Jose, CA 95134, U.S.A.

• Humayun Raashina

  Direct Metals Business Unit, Novellus Systems, Inc., 4000 North First Street, San Jose, CA 95134, U.S.A.

• Wongsenakhum Panya

  Direct Metals Business Unit, Novellus Systems, Inc., 4000 North First Street, San Jose, CA 95134, U.S.A.

• Chang Sean

  Direct Metals Business Unit, Novellus Systems, Inc., 4000 North First Street, San Jose, CA 95134, U.S.A.

• Kawaguchi Masazumi

  Novellus Systems Japan, Livmo Building 11F, 3-9-1 Shin-yokohama, Kohoku-ku, Yokohama 222-0033, Japan

関連論文

• Tungsten Contact and Line Resistance Reduction with Advanced Pulsed Nucleation Layer and Low Resistivity Tungsten Treatment

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