The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases

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概要

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• The impact of local strain on low frequency noise (LFN) in p-channel metal–oxide–semiconductor field effect transistor (pMOSFET) is investigated under dynamic body biases. For 60 nm pMOSFET, the uni-axial compressive strain from embedded SiGe (e-SiGe) in source/drain can contribute 75% effective mobility ($\mu_{\text{eff}}$) enhancement and the proportional improvement in current ($I_{\text{DS}}$) as well as transconductance ($G_{\text{m}}$). However, the strained pMOSFET suffer more than 80% higher LFN ($S_{\text{ID}}/I_{\text{D}}{}^{2}$) compared with the control pMOSFET free from strain engineering. The measured LFN can be consistently explained by mobility fluctuation model and the increase of Hooge parameter ($\alpha_{\text{H}}$) appears as a key factor responsible for the higher LFN in strained pMOSFET. Forward body biases (FBB) is proposed as an effective method adapted to nanoscale devices for improving $\mu_{\text{eff}}$ and suppressing LFN, without resort to strain engineering.

• 2010-08-25

著者

• Yeh Kuo-Liang

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Ku Chih-You

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Guo Jyh-Chyurn

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

関連論文

• The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases

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