Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-μm InAs–GaAs Quantum-Dot Lasers
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概要
- 論文の詳細を見る
Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-μm self-assembled InAs–GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light–current ($L$–$I$) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES.
- 2010-07-25
著者
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Ji Hai-Ming
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Wang Zhan-Guo
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China
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Yang Tao
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Cao Yu-Lian
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Xu Peng-Fei
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Gu Yong-Xian
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Gu Yong-Xian
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Wang Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Xu Peng-Fei
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Cao Yu-Lian
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Yang Tao
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
関連論文
- Design of Low-Loss Surface-Plasmon Quantum Cascade Lasers
- Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-μm InAs–GaAs Quantum-Dot Lasers