Low-Temperature Sintered Pb(Zr,Ti)O3–Pb(Mn,Sb)O3–Pb(Zn,Nb)O3 for Multilayer Ceramic Actuators

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概要

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• A quaternary 0.90Pb(Zr0.48Ti0.52)O3–0.05Pb(Mn1/3Sb2/3)O3–0.05Pb(Zn1/3Nb2/3)O3 (0.90PZT–0.05PMS–0.05PZN) piezoelectric ceramic was synthesized by a conventional method, and CuO was adopted to lower its sintering temperature. The crystal structure, micromorphology, and electrical properties were studied in terms of CuO content. The results indicate that 1.0 wt % CuO addition significantly improves the sinterability of 0.90PZT–0.05PMS–0.05PZN ceramics, lowering the sintering temperature to 900 °C and maintaining moderate electrical properties: $d_{33}=306$ pC/N, $Q_{\text{m}}=997$, $k_{\text{p}}=53.6$%, $\tan\delta=0.50$%, and $\varepsilon_{33}^{T}/\varepsilon_{0}=1350$. The low-temperature sintering behavior could be explained by the formation of a transient liquid phase by CuO during sintering. Moreover, the endothermic peak at about 950 °C in the differential thermal analysis (DTA) curve of the raw ceramic powder provides further evidence of an amorphous phase. To obtain better piezoelectric properties, La2O3 was selected as the donor dopant for the 0.90PZT–0.05PMS–0.05PZN + 1.0 wt % CuO system. Our study demonstrates that La2O3 is very effective in improving piezoelectric properties, markedly increasing $d_{33}$ and $k_{\text{p}}$ without decreasing $Q_{\text{m}}$. Finally, 0.5 wt % La2O3 added 0.90PZT–0.05PMS–0.05PZN + 1.0 wt % CuO ceramics show excellent electrical properties: $d_{33}=355$ pC/N, $Q_{\text{m}}=936$, $k_{\text{p}}=58.4$%, $\tan\delta=0.32$%, and $\varepsilon_{33}^{T}/\varepsilon_{0}=1590$, which are quite suitable for multilayer piezoelectric ceramic actuators.

• 2010-07-25

著者

• Li Qian

  College Of Life Science/tianjin Key Laboratory Of Cyto-genetical And Molecular Regulation Tianjin No

• Yang Ying

  College Of Natural Resources And Environmental Science Key Laboratory Of Marine Biology Nanjing Agricultural University

• Choi Ji-Won

  Electronic Materials Center, Korea Institute of Science and Technology, Seoul 130-650, Korea

• Yoon Seok-Jin

  Electronic Materials Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Sungbuk-ku, Seoul 136-791, Korea

• Wan Dandan

  Electronic Materials Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Sungbuk-ku, Seoul 136-791, Korea

• Choi Joo-Young

  Electronic Materials Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Sungbuk-ku, Seoul 136-791, Korea

• Li Qian

  College of Materials Science and Technology, Precision Driving Laboratory, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, China

• Yang Ying

  College of Materials Science and Technology, Precision Driving Laboratory, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, China

• Choi Ji-Won

  Electronic Materials Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Sungbuk-ku, Seoul 136-791, Korea

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