Effects of Perovskite Additives on the Electromagnetic Properties of Z-Type Hexaferrites
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概要
- 論文の詳細を見る
In order to modulate the electromagnetic properties of Z-type hexaferrites for high-frequency applications, perovskite additives have been introduced. The effects of these additives on the phase composition, densification, microstructures and electromagnetic properties of the ceramics have been investigated. The results indicate that Ba0.5Sr0.5TiO3 (BST) can promote the grain growth and enhance the sintering by increasing the displacement of ions due to the lattice distortion, which is a result of the solid solubility of Ti4+ in the hexaferrite. The increase of grain size and bulk density and the decrease of magnetocrystalline anisotropy give rise to the improvement of the static permeability. Meanwhile, the dielectric constant increases with BST content due to the changing of the valence of Fe ions in octahedral sites and the polarization of the perovskite phase. In contrast, Pb0.95Sr0.05(Zr0.52Ti0.48)O3 (PZT) is not effective for improving the electromagnetic properties of hexaferrites due to the strong coupling of Ti–O and Zr–O.
- 2010-06-25
著者
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Yingming Tang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Lijun Jia
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Jia Lijun
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Tang Yingming
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Zhang Huaiwu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Pingfeng Deng
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Yingli Liu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
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Baoyuan Liu
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China