Microwave Characterization of a Field Effect Transistor with Dielectrophoretically-Aligned Single Silicon Nanowire
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概要
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Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from $S$-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.
- 2010-06-25
著者
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Lee Jongwoon
Research Center For Time-domain Nano-functional Devices Korea University
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Doyeol Ahn
Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Dongdaemun, Seoul 130-743, Korea
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Jae-Hyun Ahn
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Kang Myung-Gil
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Ahn Jae-Hyun
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Dong-Hoon Hwang
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Hee-Tae Kim
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Jae-Seong Rieh
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Dongmok Whang
Research Center for Time Domain Nano-functional Devices, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Maeng-Ho Son
Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Dongdaemun, Seoul 130-743, Korea
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Yun-Seop Yu
Department of Information and Control Engineering and ETI, Hankyong National University, Anseong 456-749, Korea
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Sung-Woo Hwang
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Jongwoon Lee
Research Center for Time Domain Nano-functional Devices, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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