Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist

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概要

• 論文の詳細を見る

• This study shows that poly(methyl methacrylate) (PMMA) 950 thick photoresist is a promising polymer for ion-track nanolithography templates for nanomaterials fabrication resulting in high aspect ratio nanostructures ranging from 100 to 500 with highly selective etch rates when using deep ultraviolet (DUV) cross linking polymerisation prior to the ion-track irradiation. DUV exposure times and post exposure hardbake conditions are crucial factors for achieving high aspect ratio structures. Exposure doses of 6600 mJ/cm2 with post exposure hardbake at 180 °C for 90 s gave promising preliminary results for high aspect ratio nanotemplates using thick layer of PMMA 950 photoresist.

• 2010-06-25

著者

• Neil M.

  School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K.

• Marcel Fowler

  School of Physics and Astronomy University of Southampton, Southampton SO17 1BJ, U.K.

• Stephen L.

  School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K.

• Elena Koukharenko

  School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K.

• Jekaterina Kuleshova

  School of Chemistry, University of Southampton, Southampton SO17 1BJ, U.K.

• Michael J.

  School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K.

• Stephen P.

  School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, U.K.

• Iris Nandhakumar

  School of Chemistry, University of Southampton, Southampton SO17 1BJ, U.K.

関連論文

• Ion Track Nanolithography Using Thick Cross-Linked Poly(methyl methacrylate) 950 Photoresist

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