Projection Charged Particle Nanolithography and Nanopatterning

概要

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The projection charged particle multi-beam techniques of IMS Nanofabrication are based on illuminating a programmable aperture plate system [APS; consisting of an aperture plate and a blanking plate with integrated complementary metal–oxide–semiconductor (CMOS) electronics] with a telecentric broad beam, to separate this beam into thousands of micrometer sized beams and to demagnify the beamlets thus formed to nanometer dimensions, using a projection charged particle optics with $200\times$ reduction. Only beams which are unaffected by the blanking plate are projected to the substrate whereas beams which are slightly deflected are filtered out at a contrast aperture at the second cross-over of the projection optics. Proof-of-concept test systems were realized for these techniques. Inserting a 43k-APS providing 43 thousand programmable 12.5 nm sized beams complex patterns were realized in $20 \times 20$ μm2 exposure fields when using 10 keV H3+ ions. For the electron multi-beam test system the beam at the APS was limited to 2 mm diameter, thus realizing 2500 programmable electron beams of 12.5 nm size and 50 keV energy within an exposure field of ca. $7 \times 7$ μm2. Application fields of projection charged particle multi-beam techniques are CHARPAN (Charged Particle Nanopatterning, with ion multi-beams), PML2 (Projection Mask-Less Lithography), and eMET (electron Mask Exposure Tool).
2010-06-25