X-ray Stress Evaluation in Phase Change GeSbTe Material and TiW Electrodes

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概要

• 論文の詳細を見る

• Stress generation and relaxation upon Ge2Sb2Te5 (GST) crystallization were studied by X-ray diffraction technique, which allows the stress in either GST or Ti3W7 (TiW) to be evaluated independently within TiW/GST/TiW multilayer film. The GST crystallization results in tensile stress in the GST film and additional compressive stress in the TiW film, due to volume shrinkage of the GST film. Moreover, the tensile stress in the GST film is significantly increased when it is sandwiched between TiW films. Interfacial effect is proposed to attribute the dependence of stress on the capping layer thickness.

• 2010-05-25

著者

• Tow Chong

  Data Storage Institute, (A*STAR) Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608

• Yi Li

  Department of Materials Science and Engineering, National University of Singapore, 7 Engineering Drive 1, Singapore 117574

• Minghua Li

  Data Storage Institute, (A*STAR) Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608

• Luping Shi

  Data Storage Institute, (A*STAR) Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608

• Rong Zhao

  Data Storage Institute, (A*STAR) Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608

関連論文

• X-ray Stress Evaluation in Phase Change GeSbTe Material and TiW Electrodes
• Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

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