Integration of Photo-Patternable Low-$\kappa$ Material into Advanced Cu Back-End-Of-The-Line

概要

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We report herein the demonstration of a simple, low-cost Cu back-end-of-the-line (BEOL) dual-damascene integration using a novel photo-patternable low-$\kappa$ dielectric material concept that dramatically reduces Cu BEOL integration complexity. This $\kappa=2.7$ photo-patternable low-$\kappa$ material is based on the SiCOH-based material platform and has sub-200 nm resolution capability with 248 nm optical lithography. Cu/photo-patternable low-$\kappa$ dual-damascene integration at 45 nm node BEOL fatwire levels has been demonstrated with very high electrical yields using the current manufacturing infrastructure. The photo-patternable low-$\kappa$ concept is, therefore, a promising technology for highly efficient semiconductor Cu BEOL manufacturing.
2010-05-25