Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

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概要

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• Cobalt plasma-enhanced atomic layer deposition (PE-ALD) using cyclopentadienyl isopropyl acetamidinato-cobalt [Co(CpAMD)] precursor and NH3 plasma was investigated. The PE-ALD Co thin films were produced well on both SiO2 and Si(001) substrates. The deposition characteristics and films properties such as resistivity, chemical bonding states and quantitative impurity level contents were investigated. Especially, Co deposition using this precursor was possible at very low growth temperature as low as 100 °C, which enable the deposition on polymer-based substrate. We demonstrate that this low growth temperature PE-ALD can be applicable to patterning of Co film by lift-off method, which was realized by direct deposition of Co on photoresist patterned substrate.

• 2010-05-25

著者

• Hyungjun Kim

  School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

• Kim Jae-Min

  School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

• Lee Han-Bo-Ram

  School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

• Lansalot Clement

  Air Liquide US, 200 GBC Drive, Newark, DE 19702, U.S.A.

• Christian Dussarrat

  Air Liquide US, 200 GBC Drive, Newark, DE 19702, U.S.A.

• Julien Gatineau

  Air Liquide Laboratories, 28 Wadai, Tsukuba, Ibaraki 300-4247, Japan

• Jae-Min Kim

  School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea

関連論文

• Plasma-Enhanced Atomic Layer Deposition of Ni
• Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

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