Organic Nano-Floating-Gate Memory with Polymer:[6,6]-Phenyl-C61 Butyric Acid Methyl Ester Composite Films

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Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage ($V_{\text{Th}}$) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility ($\mu_{\text{FET}}$) (0.2–0.3 cm2 V-1 s-1) with a large memory window (ca. 20 V), a high on/off ratio (${\sim}10^{4}$) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (${\sim}1$ ms), and a retention time of about 40 h.
2010-05-25