Characteristics of Silicon Oxynitride Barrier Films Grown on Poly(ethylene naphthalate) by Ion-Beam-Assisted Deposition
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概要
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For the application of transparent barriers to water vapor permeation for plastic substrates, we have prepared silicon oxynitride thin films on a poly(ethylene naphthalate) substrate at room temperature by the ion-beam-assisted electron beam evaporation method and investigated their characteristics with respect to N2 flow rate in the ion source. The experimental results reveal that when N2 flow rate increases, the nitrogen concentration and Si–N bonding in SiOxNy films increase owing to the assisted N2 ion incorporations during the film deposition process. Also, with increasing N2 flow rate, the surface roughness and optical transmittance of the barrier film decrease, whereas refractive index and film density increase. It is confirmed that the water vapor transmission rate of our barrier films decreases with the incorporation of N2 ions into the films, being strongly dependent on surface roughness and film density.
- 2010-05-25
著者
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Sohn Sang
Department Of Hematology/oncology Kyungpook National University Hospital
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Sang Ho
Department of Physics, Kyungpook National University, Daegu 702-701, Korea
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Lee Do
Mobile Display Research Center, Gumi Electronics and Information Technology Research Institute, Gumi, Gyeongsangbuk-do 730-853, Korea
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Shin Han
Mobile Display Research Center, Gumi Electronics and Information Technology Research Institute, Gumi, Gyeongsangbuk-do 730-853, Korea
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