Optical and Dielectric Properties of Transparent Epitaxial GdVO4/n-GaN/Sapphire Heterostructure

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概要

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• GdVO4 (GVO) thin films were successfully deposited on n-GaN/Al2O3 substrates used as a bottom electrode at 600 °C by radio frequency magnetron sputtering. The GVO films annealed at temperatures up to 800 °C exhibited epitaxial growth but the films annealed above 900 °C showed polycrystalline properties. In the photoluminescence (PL) spectrum, broadband emission was observed at 450 nm for all the films. The auger electron spectroscopy (AES) line-shape of the annealed films was similar to that of the as-deposited film but the Gd/V and Gd/O ratios increased linearly with increasing annealing temperature. The dielectric constant and dielectric loss of the GdVO4 films decreased with increasing annealing temperature with values of 12–26 and 0.04–0.05 at 1 MHz, respectively.

• 2010-04-25

著者

• Jong-Pil Kim

  Busan Center, Korea Basic Science Institute, Busan 609-735, Korea

• Hyeong-Soo Ahn

  Department of Applied Science, Korea Maritime University, Busan 606-701, Korea

• Kyun Ahn

  College of Nanoscience and Nanotechnology, Pusan National University, Miryang 627-760, Korea

• Jeong Ye-Sul

  College of Nanoscience and Nanotechnology, Pusan National University, Miryang 627-760, Korea

• Ahn Kyun

  College of Nanoscience and Nanotechnology, Pusan National University, Miryang 627-760, Korea

• Jeong Se-Young

  College of Nanoscience and Nanotechnology, Pusan National University, Miryang 627-760, Korea

• Soon-Gil Yoon

  School of Nano Science and Technology, Chungnam National University, Daejeon 305-764, Korea

• Hyun-Gyu Kim

  Busan Center, Korea Basic Science Institute, Busan 609-735, Korea

• Hong-Seung Kim

  Department of Applied Science, Korea Maritime University, Busan 606-701, Korea

• Chae-Ryong Cho

  College of Nanoscience and Nanotechnology, Pusan National University, Miryang 627-760, Korea

• Ye-Sul Jeong

  College of Nanoscience and Nanotechnology, Pusan National University, Miryang 627-760, Korea

• Se-Young Jeong

  College of Nanoscience and Nanotechnology, Pusan National University, Miryang 627-760, Korea

関連論文

• Optical and Dielectric Properties of Transparent Epitaxial GdVO4/n-GaN/Sapphire Heterostructure

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