Current Distribution Analysis of Insulated Gate Bipolar Transistor Cells
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概要
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In current insulated gate bipolar transistor (IGBT) technology, a corner or centered gate pad is employed with polycrystalline silicon (poly-Si) to form the metal oxide semiconductor (MOS) gate structure which forms a resistor–capacitor (RC) network across the die. This paper presents, for the first time, an analysis using circuit simulator, SABER, to analyze its influence on the internal behavior of the IGBT. The difference in the interconnect gate impedance between each cathode cells is found to influence their gate drive voltages, which results in the divergence of collector current within each cathode cells during transient periods. Proper distribution of the poly-Si gate impedance is necessary to achieve uniformity of current distribution in the device.
- 2010-04-25
著者
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E. M.
Department of Electrical and Electronic Engineering, University of Sheffield, Mappin Street, Sheffield, S1 1JD, United Kingdom
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Luther-King Ngwendson
Department of Electrical and Electronic Engineering, University of Sheffield, Mappin Street, Sheffield, S1 1JD, United Kingdom
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Long Hongyao
Department of Electrical and Electronic Engineering, University of Sheffield, Mappin Street, Sheffield, S1 1JD, United Kingdom
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Sweet Mark
Department of Electrical and Electronic Engineering, University of Sheffield, Mappin Street, Sheffield, S1 1JD, United Kingdom
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Ngwendson Luther-King
Department of Electrical and Electronic Engineering, University of Sheffield, Mappin Street, Sheffield, S1 1JD, United Kingdom