Electron Transport Properties in Photo and Supersonic Wave Irradiated C60 Fullerene Nano-Whisker Field-Effect Transistors

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We have investigated the irradiation effect of ultraviolet light (UV) and supersonic wave (SW) into fullerene nano-whisker (FNW) field-effect transistors (FET). FNW has been fabricated by liquid/liquid interfacial precipitation using a system of C60-saturated m-xylene and isopropyl alcohol. And the morphology of FNW has been observed by a scanning electron microscope. The UV irradiation effect of FNW-FET in vacuum was observed that field effect mobility reduced from $10^{-2}$ to $10^{-3}$ cm2 V-1 s-1. Also, SW irradiation in solution, the FNW-FET shows a large increase on/off ratio from 10 to 1000. There exists a clear improvement in FET performance by use of both UV and SW irradiation for FNW. Also, the effect of exposure in air has been discussed on their FET performance.
2010-04-25