Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors
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概要
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Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 μm length/μm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an $I_{\text{on}}/I_{\text{off}}$ ratio of $10^{5}$ and a steep sub-threshold slope of 130 mV/dec.
- 2010-04-25
著者
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David C.
School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom
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John L.
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom
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Uchino Takashi
School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
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Ayre Greg
School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom
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Smith David
School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom
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C. H.
School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
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Peter Ashburn
School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
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Takashi Uchino
School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
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Greg N.
School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom