Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors
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概要
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The device performance of graphene nanoribbon (GNR) tunneling field-effect transistor (TFET) is studied using the self-consistent non-equilibrium Green’s function (NEGF) and quasi-two dimensional Poisson solver based on the Dirac equation model. The effects of different GNR widths and doping concentrations at the source and drain on the device characteristics are investigated and the electronic property of the GNR TFET is found to be strongly dependent on its width. A comprehensive characterization of this dependence is expected to be crucial to the designs and fabrications of GNR TFETs. Furthermore, the doping concentrations at the source and drain is found to play a crucial role on the ON- and OFF-state currents ($I_{\text{ON}}$ and $I_{\text{OFF}}$) respectively. Therefore, the ability to control the doping concentrations allows the tailoring of the drive current, the $I_{\text{ON}}/I_{\text{OFF}}$ ratio and the subthreshold swing of GNR TFETs to meet different design requirements.
- 2010-04-25
著者
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Gengchiau Liang
Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
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Sai-Kong Chin
Institute of High Performance Computing, A*STAR, 1 Fusionopolis Way, 16-16 Connexis, Singapore 138632
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S. Bala
Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
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Lam Kai-Tak
Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
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Chin Sai-Kong
Institute of High Performance Computing, A*STAR, 1 Fusionopolis Way, 16-16 Connexis, Singapore 138632
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Seah Da
Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
関連論文
- Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors
- A Computational Study on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes