Helium Ion Secondary Electron Mode Microscopy For Interconnect Material Imaging

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概要

• 論文の詳細を見る

• The recently developed helium ion microscope (HIM) is now capable of 0.35 nm secondary electron (SE) mode image resolution. When low-$k$ dielectrics or copper interconnects in ultra large scale integrated circuits (ULSI) interconnect structures were imaged in this mode, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution was available for the first time. This paper will discuss the helium ion microscope architecture and the SE imaging techniques that make the HIM observation method of particular value to the low-$k$ dielectric and dual damascene copper interconnect technologies.

• 2010-04-25

著者

• Lou Farkas

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• William Thompson

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• Lewis Stern

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• Ogawa Shinichi

  Back End Process Program, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Thompson William

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• Stern Lewis

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• Larry Scipioni

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• John Notte

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• Louise Barriss

  ALIS Division, Carl Zeiss SMT, Inc., One Corporation Way, Peabody, MA 01960, U.S.A.

• Shinichi Ogawa

  Back End Process Program, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

関連論文

• Helium Ion Secondary Electron Mode Microscopy For Interconnect Material Imaging

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