Erratum: "A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density"
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概要
- 論文の詳細を見る
- The Japan Society of Applied Physicsの論文
- 2010-03-25
著者
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Tetsu Tanaka
Department of Bioengineering and Robotics, Tohoku University, Sendai 980-8579, Japan
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Mitsumasa Koyanagi
Department of Bioengineering and Robotics, Tohoku University, Sendai 980-8579, Japan
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Ji Chel
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan
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Kang Wook
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan
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Yun Heub
Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Gae-Hun Lee
Department of Electronics and Communications Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea
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Mitsumasa Koyanagi
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan
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- Erratum: "A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density"