Surface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy

概要

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GaP surface evolution on Si substrates in the initial growth stage was investigated using atomic force microscopy. The GaP was grown on 4°-misoriented Si substrates at 700–830 °C using metalorganic vapor phase epitaxy. Island growth was predominant below nominal 5 nm thickness at 830 °C. Several antiphase domains (APDs) grew to be 100 nm or longer at nominal 5 nm deposition. They were 5 nm higher than surrounding islands. The surrounding islands formed a layer at a nominal thickness over 5 nm. The layer grew vertically faster than the APDs. Several APDs grew laterally until a layer-thickness exceeded an APD height. The layer finally embedded the APDs. Self-annihilation of APDs was achieved below 40 nm thickness. Similar surface evolution was found at 770 and 800 °C. The APD size decreased with decreasing temperature. Self-annihilation of APDs was achieved below 20 nm thickness at 770 °C.
The Japan Society of Applied Physicsの論文
2010-03-25