Amorphous In–Sn–Si–O Thin-Film Transistors Having Various Si Compositional Ratios

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概要

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• We investigate the possibility of utilizing a new material, amorphous indium-tin-silicon oxide In10Sn1SixO2x+17 (a-ITSO), for the active layer in oxide-semiconductor TFTs, using a co-sputtering technique with ITO and Si targets. A Si compositional ratio $x=1.88$ yielded the TFT performance with a field-effect mobility of approximately 5 cm2 V-1 s-1. Spectroscopic investigations confirmed that the diversity of the Si compositional ratio in the a-ITSO films results in significant changes in chemistry and electronic structure, leading to considerable variations in the characteristics of the a-ITSO TFTs.

• 2010-02-25

著者

• Kazushige Takechi

  Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan

• Shinya Yamaguchi

  Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan

• Mitsuru Nakata

  Technology Research Association for Advanced Display Materials (TRADIM), Koganei, Tokyo 184-0012, Japan

• Hiroshi Tanabe

  NEC LCD Technologies, Ltd., Kawasaki 211-8666, Japan

• Setsuo Kaneko

  NEC LCD Technologies, Ltd., Kawasaki 211-8666, Japan

関連論文

• Amorphous In–Sn–Si–O Thin-Film Transistors Having Various Si Compositional Ratios

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