Ge2Sb2Te5 Phase Change Memory Cell Featuring Platinum Tapered Heating Electrode For Low-Voltage Operation
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概要
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Phase change random access memory (PC-RAM) with a Pt tapered heating electrode (Pt-THE), which was fabricated using a focus ion beam (FIB), was investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.5 to 2.4 V. The programming region of the cell with Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
- 2010-02-25
著者
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Songlin Feng
The Research Center of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Zhitang Song
The Research Center of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Lv Shilong
The Research Center of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
The Research Center of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Liu Yan
The Research Center of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Shilong Lv
The Research Center of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Yan Liu
The Research Center of Functional Semiconductor Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China