GaAs Nanowire and Crystallite Growth on Amorphous Substrate from Metalorganic Precursors
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概要
- 論文の詳細を見る
GaAs nanowires and crystallites were grown by metalorganic chemical vapor deposition from metalorganic precursors on amorphous silica obtained by thermal oxidation of 111 plane Si. The samples were characterized by scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that crystalline GaAs structures can be grown on silica.
- 2010-02-25
著者
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Harri Lipsanen
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland
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Gintare Statkute
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland
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Albert G.
NanoMaterials Group, Department of Engineering Physics, Helsinki University of Technology, Puumiehenkuja 2, 02150 Espoo, Finland
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Markku Sopanen
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland
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Teppo Hakkarainen
Department of Micro and Nanosciences, Helsinki University of Technology, P.O. Box 3500, 02015 TKK, Finland
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Esko Kauppinen
NanoMaterials Group, Department of Engineering Physics, Helsinki University of Technology, Puumiehenkuja 2, 02150 Espoo, Finland