Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures

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概要

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• We report on the mechanism of electronic structure and different carrier relaxation processes in InAs/InxGa1-xAs dots-in-a-well (DWELL) structure investigated by comprehensive spectroscopic characterization. Selectively excited photoluminescence and photoluminescence excitation analyses reveal that when excited at different photon energies, carriers relax to the ground state of the quantum dots by distinct schemes. Our investigation clearly manifests the roles of longitudinal optical phonons and absorption continuum states played in the carrier relaxation process in DWELL structures.

• 2010-02-25

著者

• Hui-Yun Liu

  Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom

• Chen Rui

  Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

• Liu Hui-Yun

  Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom

• Sun Han-Dong

  Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

関連論文

• Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures

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