Analytical Threshold Model for Nanoscale Cylindrical Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistor with High-$\kappa$ Gate Dielectric and Tri-Material Gate Stack
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概要
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A novel cylindrical surrounding-gate metal–oxide–semiconductor field effect transistor with high-$\kappa$ gate dielectric and tri-material gate stack (TMGCSG MOSFET) is presented. The performance of the new structure is studied by developing physics-based analytical models for surface potential, electric field, and threshold voltage. It is found that TMGCSG MOSFET can effectively suppress short-channel effects and hot-carrier effects, and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage roll-off for TMGCSG MOSFET can be significantly reduced by adopting both a small effective stack-gate oxide thickness and a small radius silicon channel. The accuracy of the analytical models is verified by its good agreement with the three-dimensional numerical device simulator DESSIS.
- 2010-12-25
著者
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Han Ru
Aviation Microelectronics Center, Northwestern Polytechnic University, Xi'an 710072, China
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Li Cong
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
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Zhuang Yi-Qi
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
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Zhuang Yi-Qi
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China