Effects of Hydrogen Doping on the Electrical Properties of Zinc–Tin–Oxide Thin Films

概要

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Transparent conducting oxide films composed of ZnO and SnO2 were prepared on glass substrates by co-sputtering method. After surveying the electrical properties of the films according to the cationic composition and process conditions, we investigated the influences of hydrogen doping on the films’ characteristic properties. With a moderate addition of H2 in sputtering gas, carrier concentration of the films increased from $3.32\times 10^{19}$ to $5.22\times 10^{19}$ cm-3, and the resistivity decreased from $7.23\times 10^{-3}$ to $5.29\times 10^{-3}$ $\Omega$$\cdot$cm. The increase in carrier concentration with H2 can be attributed to the presence of hydrogen shallow donors as well as the formation of oxygen vacancies. However, the hydrogen addition contributed to the formation of SnO local states in Zn–Sn–O films, resulting in the decreases in carrier mobility and optical transmittance. Furthermore, changes in the electrical properties of the films upon annealing in vacuum or reducing atmosphere were investigated to elucidate the state of hydrogen atoms incorporated in Zn–Sn–O films.
2010-12-25