A Binary Tunnel Field Effect Transistor with a Steep Sub-threshold Swing and Increased ON Current

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概要

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• A variant tunnel field effect transistor structure called the binary tunnel field effect transistor (BTFET) for low voltage and near ideal switching characteristics is proposed. The BTFET relies on a binary tunneling distance (HIGH and LOW) for its operation to achieve a steep sub-threshold swing with a predicted range of 5 mV/dec. The transition of tunneling distance from HIGH to LOW state is a step-function of the gate voltage with the threshold voltage as a transition voltage. BTFET has a high on-current due to the high gate electric field and a large tunneling cross section area. An orientation dependent non-local band-to-band tunneling model was used to analyze the DC characteristics of the device.

• 2010-12-25

著者

• Rao V.

  Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology, Bombay 400076, India

• Asra Ram

  Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology, Bombay 400076, India

• Murali Kota

  IBM Semiconductor Research and Development Center, Bangalore 560045, India

• Ramgopal Rao

  Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology, Bombay 400076, India

関連論文

• A Binary Tunnel Field Effect Transistor with a Steep Sub-threshold Swing and Increased ON Current

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