Yellow Photoluminescence of Europium Thiosilicate on Silicon Substrate

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概要

• 論文の詳細を見る

• We report the fabrication of europium thiosilicate (Eu2SiS4) on a silicon substrate. Europium sulfide (EuS) is thermally evaporated on a silicon substrate. It is sealed in a vacuum with sulfur and then heated at 650 °C. Eu2SiS4 shows intense yellow photoluminescence, and its wavelength (peak 570 nm) and width (60 nm) are reproducible. This corresponds to the 4f65d–4f7 transition of Eu2+. The photoluminescence efficiency of Eu2SiS4 is measured and estimated to be 0.5%.

• 2009-07-25

著者

• Okuno Tsuyoshi

  Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

• Nishimura Masumi

  Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

• Nanai Yasushi

  Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

• Bohda Takayuki

  Department of Applied Physics and Chemistry, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan

関連論文

• Yellow Photoluminescence of Europium Thiosilicate on Silicon Substrate
• Photoluminescence Properties of Eu3+-Doped ZnO Nanoneedles
• Intense Green Luminescence from Eu2+-doped ZnO Microstructures
• Optical Properties of Silicon Nanowires Fabricated by Electroless Silver Deposition

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