Patterning and Formation of SiO2 Nanoparticles on a Substrate by Electrically Attracting of Cluster Ions

概要

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The cluster-ion deposition method was newly developed here based on the ionization chemical vapor deposition (ionization CVD) method. In this new method, reactant gases are first ionized and then form cluster ions that deposit directly onto a substrate. Experimental results revealed that (1) SiO2 nanoparticles can be deposited on Si wafers at temperatures lower than the particle generation temperature in tetraethylorthosilicate (TEOS)/oxygen reaction system, (2) the Si wafer ($1.4 \times 1.4$ cm2) can be uniformly covered with nanoparticles at high density ($10^{10}$ cm-2), and (3) nanoparticles can be selectively deposited and arranged onto a charged line pattern on the Si wafer.
2009-07-25