Characterization of Boron- and Phosphorous-Incorporated Tetrahedral Amorphous Carbon Films Deposited by the Filtered Cathodic Vacuum Arc Process

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This paper reports the X-ray photoelectron spectroscopy (XPS), X-ray-induced Auger electron spectroscopy (XAES), and Raman studies of boron- and phosphorous-incorporated tetrahedral amorphous carbon (ta-C) films deposited by the filtered cathodic vacuum arc process. A systematic study of the influence of varying boron (B) and phosphorous (P) content on the properties of the as-grown ta-C films deposited at high negative substrate bias ($-300$ V) is reported by analyzing the C 1s, B 1s, and P 1s core levels using photoelectron spectroscopy. The sp3 and sp2 contents in the films were determined by measuring the width of the X-ray-induced Auger peaks. B incorporation in ta-C films up to 2.0 at. % increases the sp2 content and decreases the sp3 content by 3.6%, whereas P incorporation up to 2.0 at. % results in an increase of sp2 content and decrease of sp3 content by ${\sim} 30$%. The valence band spectra show changes in the Fermi level as B and P are incorporated into the ta-C films. The characteristic Raman spectra confirm the high sp3 content in the deposited films. Thus, the study demonstrates, in the case of high negative substrate bias films, that a pronounced decrease in sp3 fraction or the diamond-like nature of the ta-C films occurs upon P incorporation in comparison to that upon B incorporation.
2009-06-25