Deep-Etched Photonic Crystal Laser Structure of InP-Based Asymmetric Multiple Quantum Wells

概要

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A photonic crystal (PhC) laser structure was fabricated on an InP substrate. The wafer consists of a p–i–n laser epitaxial structure using asymmetric InGaAs/InGaAlAs multiple quantum wells as the active layer. The epistructure has a broadband electroluminescence spectrum centered at an optical wavelength $(\lambda) = 1538$ nm with a 3 dB bandwidth = 115 nm. The deep-etched PhC laser structure was achieved by inductively coupled plasma dry etching using a Cl2 + SiCl4 + CH4 mixture. The room-temperature optical spectrum of the PhC laser structure shows three sharp emission peaks at $\lambda = 1505$, 1535, and 1551 nm, which correspond to the resonant modes of the PhC.
2009-06-25