Electronic Properties of Graphite with Rotational Stacking Arrangement
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概要
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The electronic structure of graphite is studied using the generalized tight-binding approximation. We investigate how the energy spectra around the Fermi energy of graphite depend on interlayer stacking arrangement. We find that graphite and bilayer graphene with rotational stacking arrangement are metals with a massless Dirac fermion at the Fermi level, as is the case for isolated graphene sheets. Due to the spatially separated K points on each layer, two pairs of linear dispersion curves cross at the Fermi energy and are expected to exhibit characteristics different from those of graphite with AB stacking.
- 2009-05-25
著者
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Okada Susumu
Graduate School of Pure and Applied Sciences and Center for Computational Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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Kobayashi Toshio
Semiconductor Technology Develop Division, SONY Corporation, 4-14-1 Asahicho, Atsugi, Kanagawa 243-0014, Japan
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