Growth of ZnO Epitaxial Films Using 3C-SiC Substrate with Buried Insulating Layer

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概要

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• ZnO epitaxial films were grown by metal organic chemical vapor deposition (MOCVD) on novel large-diameter or 8-in. 3C-SiC substrate with a buried insulating layer whose structure is 3C-SiC/SiO2/Si. The substrate is fabricated by thinning the top Si layer of a silicon-on-insulator (SOI) substrate, and then carbonizing the ultrathin top Si layer of the SOI substrate. X-ray diffraction (XRD) and photoluminescence (PL) of the ZnO epitaxial films on a 3C-SiC substrate with a buried insulating layer revealed excellent characteristics of crystalline structure and luminescence. These results can be attributed not only to the 3C-SiC layer with a small lattice mismatch for ZnO but also to the buried insulating layer working as a compliant buffer layer. Thus, the 3C-SiC substrate with a buried insulating layer has advantages for growing high-quality ZnO epitaxial films owing to the small lattice mismatch and for fabricating ZnO epitaxial films inexpensively owing to Si technology.

• 2009-04-25

著者

• Nakao Motoi

  Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan

• Nakano Takahiro

  Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan

• Ishitani Kiyoshi

  Nihon Colmo Co., 3-2-2 Hino, Daito, Osaka 574-0062, Japan

• Tanehira Takafumi

  Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyushu 804-8550, Japan

関連論文

• Growth of ZnO Epitaxial Films Using 3C-SiC Substrate with Buried Insulating Layer

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