Hydrogen Annealing of ZnMgO Sol–Gel Films

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概要

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• ZnMgO films were formed on quartz substrates by a sol–gel technique using high (800 °C) and low (500 °C) temperature processes, followed by annealing in a hydrogen atmosphere at 420 °C. Photoluminescence (PL) measurements indicate that, for the low temperature process films, hydrogen annealing decreases the green band (500–565 nm) emission but it increases only slightly the near band edge (NBE) emission. For the high temperature process films, hydrogen annealing decreases the green band emission significantly and it also increases the NBE emission by three to four times. The effect of the hydrogen annealing on the PL property is explained by a conventional polycrystalline and grain boundary model. The above results indicate that the combination of the 800 °C crystallization process and the 420 °C hydrogen annealing process is very effective to obtain sufficiently strong NBE emission from the ZnMgO sol–gel films.

• 2009-04-25

著者

• Komiyama Takao

  Electronics and Information Systems, Akita Prefectural University, Yuri-honjo, Akita 015-0055, Japan

• Aoyama Takashi

  Electronics and Information Systems, Akita Prefectural University, Yuri-honjo, Akita 015-0055, Japan

• Abe Kazunori

  Electronics and Information Systems, Akita Prefectural University, Yuri-honjo, Akita 015-0055, Japan

• Chonan Yasunori

  Electronics and Information Systems, Akita Prefectural University, Yuri-honjo, Akita 015-0055, Japan

• Yamaguchi Hiroyuki

  Electronics and Information Systems, Akita Prefectural University, Yuri-honjo, Akita 015-0055, Japan

関連論文

• Hydrogen Annealing of ZnMgO Sol–Gel Films

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