Room Temperature Ferromagnetism of Mn Implanted AlInN

スポンサーリンク

概要

• 論文の詳細を見る

• Ferromagnetic properties of Mn-implanted wurtzite AlxIn1-xN/GaN thin films grown by metal organic chemical vapor deposition (MOCVD) were observed using a quantum design superconducting quantum interference device (SQUID) magnetometer. Hysteresis behavior with a reasonably high saturation magnetic moment at room temperature for all the samples was noted. Two optical thresholds were observed at 1.58 and 2.64 eV, which are attributed to internal transition ($\text{$^{5}$E}\rightarrow\text{$^{5}$T$_{2}$}$) of Mn3+ (d4) and hole emission from the neutral Mn acceptor level to the valence band respectively. Bound magnetic polaron formation is considered to be the origin of ferromagnetism in our samples.

• 2009-04-25

著者

• Ali Akbar

  Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad 45320, Pakistan

• Majid Abdul

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

• Zhu Jian

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

• Sharif Rehana

  Department of Physics, University of Engineering and Technology, Lahore, Pakistan

関連論文

• Room Temperature Ferromagnetism of Mn Implanted AlInN

スポンサーリンク