4H-SiC Trench Metal Oxide Semiconductor Field Effect Transistors with Low On-Resistance

概要

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The fabrication and characteristics of high-performance 4H-SiC trench metal oxide semiconductor field effect transistors (MOSFETs) are presented. Vertical trench etching of SiC without sub trenches was performed by inductive coupled plasma-reactive ion etching (ICP-RIE) with SF6, O2, and HBr. It was found that the drain–source current ($I_{\text{ds}}$) of a single channel plane was strongly dependent on the crystallographic planes, but that of unit cells was almost independent of the crystallographic planes. Specific on-resistance ($R_{\text{on,sp}}$) at gate–source voltage $(V_{\text{gs}})=20$ V, drain–source voltage $(V_{\text{ds}})=1$ V is estimated to be 2.9 m$\Omega$ cm2, and the blocking voltage is 900 V. Moreover, $I_{\text{ds}}$ at $V_{\text{ds}}=5$ V is over 100 A. The chip is $3.0\times 3.0$ mm2. The lowest on-resistance in the fabricated trench MOSFETs is 1.7 m$\Omega$ cm2 and the blocking voltage is 790 V. The chip is $0.5\times 0.5$ mm2.
2009-04-25